Vortices at nanoscale: Still some room at the bottom
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چکیده
منابع مشابه
Plenty of room at the bottom.
discovered a field like low temperature, which seems to be bottomless and in which one can go down and down. Such a man is then a leader and has some temporary monopoly in a scientific adventure. Percy Bridgman, in designing a way to obtain higher pressures, opened up another new field and was able to move into it and to lead us all along. The development of ever higher vacuum was a continuing ...
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“There’s plenty of room at the bottom,” as Richard Feynman famously formulated it in 1959 (1). He considered the problem of manipulating and controlling things “at the bottom” of the length scale, from Ångströms to micrometers. The fame came retroactively with the rise of nanotechnology (2). By then, the advantage of studying small objects in small laboratories was clear: in a microscopic labor...
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The current nano-technology revolution is facing several major challenges: to manufacture nanodevices below 20 nm, to fabricate three-dimensional complex nano-structures, and to heterogeneously integrate multiple functionalities. To tackle these grand challenges, the Center for Scalable and Integrated NAno-Manufacturing (SINAM), a NSF Nanoscale Science and Engineering Center, set its goal to es...
متن کامل2 Room at the Bottom , Plenty of Tyranny at the Top
Richard Feynman is generally regarded as one of the fathers of nanotechnology. In giving his landmark presentation to the American Physical Society on December 29, 1959, at Caltech, his title line was, “There’s Plenty of Room at the Bottom.” At that time, Feynman extended an invitation for “manipulating and controlling things on a small scale, thereby entering a new field of physics which wa...
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A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior. A solution process is used to synthesize the copper oxide layer into 250-nm via-holes that had been patterned in Si wafers. Direct bottom-up filling of copper oxide can facilitate fabrication of nanoscale memory devices without using vacuum de...
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ژورنال
عنوان ژورنال: Annalen der Physik
سال: 2013
ISSN: 0003-3804
DOI: 10.1002/andp.201300745